Skip to main navigation menu Skip to main content Skip to site footer

Vol. 10 No. 06 (2023)
Volume 10 Issue 06

Articles

INFLUENCE OF COPPER AND IRIDIUM ATOM CLUSTERS ON THE RECOMBINATION PROPERTIES OF SILICON

Published 2023-06-01

  • Sherzod Zokirjonovich Rafikov

Sherzod Zokirjonovich Rafikov
Institute of Nuclear Physics of The Academy of Sciences of The Republic of Uzbekistan

Abstract

This article investigates the influence of copper (Cu) and iridium (Ir) atom clusters on the recombination properties of silicon (Si). Recombination processes significantly impact the performance of semiconductor devices, and understanding the effects of impurities or dopants is crucial for optimizing device efficiency. Experimental data and theoretical models are employed to analyze the recombination properties of Si in the presence of Cu and Ir atom clusters. The findings reveal the effects of these clusters on carrier lifetime, surface recombination velocity, and device performance, providing valuable insights for the design and fabrication of high-performance silicon-based devices. This research contributes to the understanding of how Cu and Ir atom clusters influence recombination in Si and offers possibilities for enhancing device performance through tailored material design and optimization strategies.

Keywords

Copper, iridium, atom clusters

PDF

References

  1. Fistul V.I. Dopant atoms in semiconductors. Moscow, Fizmatlit, 2004.
  2. Silva D. J., Wahl U., Correia J. G., et al. Drawing the geometry of 3d transition metalboron pairs in silicon from electron emission channeling experiments. Nucl. Instrum. Instrum. Methods Phys. Res. B., 2016, vol. 371, pp. 59-62. DOI: 10.1016 / j.nimb.2015.09.051
  3. Vyvenko O.F., Buonassisi T., Istratov A.A. X-ray beam induced current - a synchrotron radiation based technique for the in situ analysis of recombination properties and chemical nature of metal clusters in silicon. J. Appl. Phys., 2002, vol. 91, iss. 6, pp. 3614-3617. DOI: 10.1063 / 1.1450026
  4. Riedel F., Schröter W. Electrical and structural properties of nanoscale NiSi2 precipitates in silicon. Phys. Rev. B, 2000, vol. 62, iss. 11, pp. 7150-7156. DOI: 10.1103 / PhysRevB.62.7150
  5. Abdurakhmanov B.A., Bakhadirkhanov M.K., Ayupov K.S. Formation of clusters of impurity atoms of nickel in silicon and controlling their parameters. Nanosci. Nanotechnol., 2014, vol. 4, no. 2, pp. 23-26.
  6. Schröter W., Hedemann H., Kveder V., et al. Measurements of energy spectra of extended defects. J. Phys .: Condens. Matter., 2002, vol. 14, no. 48, pp. 13047-13059. DOI: 10.1088 / 0953-8984 / 14/48/350
  7. Lozovoy K.A. Kinetics of the formation of nanoheterostructures with germanium quantum dots on silicon for optoelectronic devices. Dis. ... Cand. physical-mat. sciences. Tomsk, TSU, 2016.
  8. Istratov A.A., Weber E.R. Electrical properties and recombination activity of copper, nickel and cobalt in silicon. Appl. Phys. A, 1998, vol. 66, iss. 2, pp. 123-136. DOI: 10.1007 / s003390050649
  9. Makhkamov Sh., Karimov M., Kurbanov A.O. and others. On the issue of thermal stability of the electrophysical properties p-Si

    and p-Si

    . Proceedings of universities. Physics, 2005, No. 12, p. 80–82.

  10. Tanaka S., Ikari T., Kitagawa H. In-diffusion and annealing processes of substitutional nickel atoms in dislocation-free silicon. Jpn. J. Appl. Phys., 2001, vol. 40, part 1, no. 5A, pp. 3063-3068. DOI: 10.1143 / JJAP.40.3063

Downloads

Download data is not yet available.