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Vol. 13 No. 03 (2026)
Volume 13 Issue 03

Articles

STUDY OF THE EFFECT OF Ni⁺ ION IMPLANTATION ON THE NEAR-SURFACE LAYERS OF SILICON USING MODERN ANALYSIS METHODS

Published 2026-03-26

  • Nodira Mustafoeva1, Allanazar Tashatov2, Bünyamin Sahin3

Nodira Mustafoeva1, Allanazar Tashatov2, Bünyamin Sahin3
University of Information Technologies and Management, Karshi city, Uzbekistan1 Karshi State University, Karshi, Uzbekistan2 Necmettin Erbakan University, Konya, Turkey3

Abstract

In this work, a comparative study of the effect of Ar⁺ and Ni⁺ ion implantation on the structural, electronic, and optical properties of monocrystalline silicon (Si) was carried out. Ion bombardment leads to disordering of the near-surface layers and a decrease in the light transmission coefficient. After thermal annealing at T = 900 K, silicon implanted with Ni⁺ ions forms epitaxial phases and nanofilms of NiSi₂ depending on the implantation dose. Modern approaches based on artificial intelligence methods for materials analysis can significantly improve the interpretation of experimental data obtained from spectroscopy and optical measurements.

Keywords

heterostructure, nanophase, ion implantation, silicon, nanofilms, silicide, surface morphology, artificial intelligence in materials science

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References

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  5. Volume: 01 Issue: 04 | 2022 ISSN: 2751-7551
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  7. Volume: 01 Issue: 04 | 2022 ISSN: 2751-7551
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